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Invited Talks
- Prof. Paul Fewster, PANalytical Research Centre, University of Sussex (UK)
"Recent Developments in X-ray Diffraction"
- Dr. Marianne Germain, Interuniversity Microelectronics Center, Leuven (Belgium)
"GaN based HEMTs"
- Dr. Volker Haerle, OSRAM Opto Semiconductors, Regensburg (Germany)
"Recent progress in GaInN based high brightness LEDs"
- Prof. Stephen D. Hersee, Center for High Technology Materials, University of New Mexico (USA)
"Nanoheteroepitaxy: the use of compliant nanostructures to accommodate large lattice mismatch in semiconductor heterostructures"
- Prof. Mutsuo Ogura, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba (Japan)
"Growth, characterization and applications of GaAs quantum wires"
- Dr. Markus Pristovsek, Technical University Berlin (Germany)
"In-situ Scanning Tunneling Microscopy in MOVPE - Promises, Challenges, Results"
- Dr. Roman Talalaev, Semiconductor Technology Research GmbH, Erlangen (Germany)
"MOVPE of group III-nitrides: models and mechanisms"
- Prof. Simon Watkins, Simon Fraser University, Vancouver (Canada)
"Growth of InP/antimonide heterostructures for electronic and optoelectronic device applications"
- Dr. Markus Weyers, Ferdinand-Braun-Institut für Höchstfrequenztechnik (FBH), Berlin (Germany)
"High power GaAs lasers"
- Prof. Gyu-Chul YI, Pohang University of Science and Technology (POSTECH) (Korea)
"Catalyst-free metal-organic vapor phase epitaxy of ZnO nanorods and their nanodevice applications"
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